Doping Engineering for PDP Optimization in SPADs Implemented in 55-nm BCD Process-Reference-Cited by-同舟云学术

Doping Engineering for PDP Optimization in SPADs Implemented in 55-nm BCD Process

Published:2024-01 Issue:1: Single-Photon Technologies Volume:30 Page:1-7
ISSN:1077-260X
Container-title:IEEE Journal of Selected Topics in Quantum Electronics
language:
Short-container-title:IEEE J. Select. Topics Quantum Electron.

Author:

Liu Feng¹^ORCID,Bruschini Claudio¹^ORCID,Toh Eng-Huat²^ORCID,Zheng Ping²^ORCID,Sun Yongshun²,Dhulla Vinit²,Quek Elgin²^ORCID,Lee Myung-Jae³^ORCID,Charbon Edoardo¹^ORCID

Affiliation:

1. Advanced Quantum Architecture Laboratory (AQUA), École Polytechnique Fédérale de Lausanne (EPFL), Neuchâtel, Switzerland

2. GlobalFoundries Singapore Pte., Ltd., Singapore

3. Post-Silicon Semiconductor Institute (PSI), Korea Institute of Science and Technology (KIST), Seoul, South Korea

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/2944/10363134/10384687.pdf?arnumber=10384687

Reference21 articles.

1. Single-photon imaging in complementary metal oxide semiconductor processes

2. A 0.18-$\mu$m CMOS SoC for a 100-m-Range 10-Frame/s 200$\,\times\,$96-Pixel Time-of-Flight Depth Sensor

3. A Reconfigurable 3-D-Stacked SPAD Imager With In-Pixel Histogramming for Flash LIDAR or High-Speed Time-of-Flight Imaging

4. A reconfigurable QVGA/Q3VGA direct time-of-flight 3D imaging system with on-chip depth-map computation in 45/40nm 3D-stacked BSI SPAD CMOS;Stoppa,2021

5. A 124-dB Dynamic-Range SPAD Photon-Counting Image Sensor Using Subframe Sampling and Extrapolating Photon Count

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Parametric Research on the Deep-Junction Silicon SPADs for Wide Spectral Response and Low Dark Count Noise;IEEE Transactions on Electron Devices;2024

2. Back-Illuminated SPAD in 40 nm CIS Technology Achieving 56 ps Timing Jitter With 15 V Breakdown Voltage for Short/Mid-Range LiDAR Applications;2023 International Electron Devices Meeting (IEDM);2023-12-09