4H-SiC Trench MOSFET with low on-resistance at high temperature-Reference-Cited by-同舟云学术

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4H-SiC Trench MOSFET with low on-resistance at high temperature

Published:2020-09 Issue: Volume: Page:
ISSN:
Container-title:2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

Takaya Hidefumi,Misumi Tadashi,Fujiwara Hirokazu,Ito Takahiro

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9163811/9170028/09170085.pdf?arnumber=9170085

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reliability under High Gate-Voltage Condition on SiC MOSFET Through Repeated Overcurrent;2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia);2024-05-17

2. Design strategy and working principle of GaN vertical trench gate MOSFETs with p-type shielding rings;Japanese Journal of Applied Physics;2024-04-01

3. A Comprehensive Study on the Fabrication of a Three-Dimensional SiC Trench MOSFET with N-P-N Sandwich Epitaxial Layers;2023 2nd Asia Power and Electrical Technology Conference (APET);2023-12-28

4. SiC Trench MOSFET with Depletion-Mode pMOS for Enhanced Short-Circuit Capability and Switching Performance;Electronics;2023-11-24

5. Demonstration of SiC Trench Gate MOSFETs with Narrow Cell Pitch Using Source Self-Aligned Process;Key Engineering Materials;2023-05-31

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