A Survey for Realizing In-Memory Computing
Author:
Affiliation:
1. Chongqing University of Posts and Telecommunications,International college of cqupt,Chongqing,China
2. University of Electronic Science and Technology of China,Glasgow college,Chengdu,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9730106/9730125/09730467.pdf?arnumber=9730467
Reference13 articles.
1. Introduction to SRAM
2. A Mixed-Signal Binarized Convolutional-Neural-Network Accelerator Integrating Dense Weight Storage and Multiplication for Reduced Data Movement
3. Quality Configurable Approximate DRAM
4. Enhancement of DRAM Performance by Adopting Metal–Interlayer–Semiconductor Source/Drain Contact Structure on DRAM Cell
5. Design of Processing-“Inside”-Memory Optimized for DRAM Behaviors
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1. An In-Memory Computing Architecture Utilizing Energy-Efficient VGSOT MRAM Device;IEEE Transactions on Circuits and Systems II: Express Briefs;2024-07
2. An In-Memory Power Efficient Computing Architecture with Emerging VGSOT MRAM Device;2024 IEEE International Symposium on Circuits and Systems (ISCAS);2024-05-19
3. Multilevel Fully Logic-Compatible Latch Array for Computing-in-Memory;IEEE Transactions on Electron Devices;2023-04
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