10 μm and 5 μm Die-to-Wafer Direct Hybrid Bonding-Reference-Cited by-同舟云学术

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10 μm and 5 μm Die-to-Wafer Direct Hybrid Bonding

Published:2022-09-13 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE 9th Electronics System-Integration Technology Conference (ESTC)
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Author:

Bourjot Emilie¹,Bond Alice¹,Ladner Carine¹,Bresson Nicolas¹,Moreau Stephane¹,Balan Viorel¹,Cornelis Arnaud¹,Bouis Renan¹,Euvrard Catherine¹,Nadi Noura¹,Sanchez Loic¹,Fournel Frank¹,Raynaud Nicolas²,Metzger Pascal²,Ollier Eric¹

Affiliation:

1. CEA-Leti,Grenoble,France

2. SET Corporation,Saint-Jeoire,France

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9939139/9939378/09939476.pdf?arnumber=9939476

Reference14 articles.

1. CMP Process Optimization for Bonding Applications;balan;ICPT 2012 - International Conference on Planarization/CMP Technology,0

2. Reliable 300 mm Wafer Level Hybrid Bonding for 3D Stacked CMOS Image Sensors

3. Advances toward reliable high density Cu-Cu interconnects by Cu-SiO2 direct hybrid bonding

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