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Analysis and Mitigation of Single-Event Gate Rupture in VDMOS With Termination Structure

  • Published:2021-06 Issue:6 Volume:68 Page:1272-1278
  • ISSN:0018-9499
  • Container-title:IEEE Transactions on Nuclear Science
  • language:
  • Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Chen ZhuojunORCID,Zhang ChenchenORCID,Wu MingORCID,Wang Teng,Zeng Yun,Wan Xin,Jin Hu,Xu Jun,Tang Minghua

Funder

National Natural Science Foundation of China

Natural Science Foundation of Hunan Province

National Key Research and Development Program of China

Foundation of Innovation Center of Radiation Application

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Normalization Indicator of Ion-Induced Radiation Damage in Power VDMOS Transistors;IEEE Transactions on Nuclear Science;2024-08

2. Impact of ⁶⁰Co-γ Irradiation Pre-Treatment on Single-Event Burnout in N-Channel Power VDMOS Transistors;IEEE Electron Device Letters;2024-07

3. An SEGR Hardened by Design Charge Pump for MTP Memories;IEEE Transactions on Nuclear Science;2024-05

4. Experimental Investigation and Hardening of Single-Event Gate Rupture in 100-V Spl-Gate Trench VDMOS;IEEE Transactions on Nuclear Science;2024-01

5. SEGR and SEB Analysis of SJVDMOS using SiO2/Si3N4 as Gate Dielectric with Buffer layer;2023 2nd International Conference on Paradigm Shifts in Communications Embedded Systems, Machine Learning and Signal Processing (PCEMS);2023-04-05
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