A hole charging layer of Co<sub>3</sub>O<sub>4</sub> stabilizes the GaN nanowires and promotes efficient carrier transport with record-high photo-response-Reference-Cited by-同舟云学术

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A hole charging layer of Co₃O₄ stabilizes the GaN nanowires and promotes efficient carrier transport with record-high photo-response

Published:2023-11-12 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE Photonics Conference (IPC)
language:
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Author:

Kang Yang¹,Wang Danhao²,Liu Xin¹,Sun D. Haiding¹

Affiliation:

1. Univeristy of Science and Technology of China,School of Microelectronics,Hefei,China,230026

2. University of Michigan,Department of Electrical Engineering and Computer Science,Ann Arbor,USA,48109

Funder

National Natural Science Foundation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10360489/10360472/10360766.pdf?arnumber=10360766

Reference4 articles.

1. Recent Progress on Perovskite Surfaces and Interfaces in Optoelectronic Devices

2. Synthesis and Applications of III–V Nanowires

3. Coupling Plasmonic Pt Nanoparticles with AlGaN Nanostructures for Enhanced Broadband Photoelectrochemical-Detection Applications

4. Achieving Record High External Quantum Efficiency >86.7% in Solar‐Blind Photoelectrochemical Photodetection

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