Impact of Ferroelectric Wakeup on Reliability of Laminate based Si-doped Hafnium Oxide (HSO) FeFET Memory Cells-Reference-Cited by-同舟云学术

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Impact of Ferroelectric Wakeup on Reliability of Laminate based Si-doped Hafnium Oxide (HSO) FeFET Memory Cells

Published:2020-04 Issue: Volume: Page:
ISSN:
Container-title:2020 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Ali T.,Kuhnel K.,Czernohorsky M.,Rudolph M.,Patzold B.,Olivo R.,Lehninger D.,Mertens K.,Muller F.,Lederer M.,Hoffmann R.,Mart C.,Kalkani M. N.,Steinke P.,Kampfe T.,Muller J.,Houdt J. Van,Seidel K.,Eng L. M.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9125439/9128217/09128337.pdf?arnumber=9128337

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Innovative Recovery Strategy for MFIS-FeFETs at Optimal Timing With Robust Endurance: Fast-Unipolar Pulsing (100 ns), Nearly Zero Memory Window Loss (0.02%), and Self-Tracking Circuit Design;IEEE Transactions on Electron Devices;2024-05

2. Tunable Non-Volatile Gate-to-Source/Drain Capacitance of FeFET for Capacitive Synapse;IEEE Electron Device Letters;2023-10

3. Wurtzite and fluorite ferroelectric materials for electronic memory;Nature Nanotechnology;2023-04-27

4. A new electrode structure of IrO_x/Bi-doped SrRuO₃ for highly reliable La-doped Pb (Zr, Ti)O₃-based ferroelectric memories;2023 22nd International Symposium INFOTEH-JAHORINA (INFOTEH);2023-03-15

5. Impact of polarization switching on the effective carrier mobility of HfZrOx ferroelectric field-effect transistor;Science China Information Sciences;2023-03-06

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