On-Chip Total Ionizing Dose Digital Monitor in Fully Depleted SOI Technologies-Reference-Cited by-同舟云学术

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On-Chip Total Ionizing Dose Digital Monitor in Fully Depleted SOI Technologies

Published:2020-07 Issue:7 Volume:67 Page:1326-1331
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Abouzeid Fady^ORCID,Gasiot Gilles^ORCID,Soussan Dimitri,de Boissac Capucine Lecat-Mathieu,Malherbe Victor,Bertin Valerie^ORCID,Lallement Guenole,Autran Jean-Luc^ORCID,Roche Philippe

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx7/23/9142457/09093079.pdf?arnumber=9093079

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Extracting Total Ionizing Dose Threshold Voltage Shifts From Ring Oscillator Circuit Response;IEEE Transactions on Device and Materials Reliability;2023-03

2. Design of a battery early warning system based on the single-chip microcomputer;Journal of Physics: Conference Series;2023-01-01

3. A RISC-V System-on-Chip with Embedded Adaptive Power–Performance–Fault-Tolerance Hardware;2022 22nd European Conference on Radiation and Its Effects on Components and Systems (RADECS);2022-10-03

4. Double-node-upset aware SRAM bit-cell for aerospace applications;Microelectronics Reliability;2022-06

5. Mitigating Total-Ionizing-Dose-Induced Threshold-Voltage Shifts Using Back-Gate Biasing in 22-nm FD-SOI Transistors;IEEE Transactions on Nuclear Science;2022-03

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