Effects of Fluorine on the NBTI Reliability and Low-Frequency Noise Characteristics of p-MOSFETs-Reference-Cited by-同舟云学术

Effects of Fluorine on the NBTI Reliability and Low-Frequency Noise Characteristics of p-MOSFETs

Published:2018 Issue: Volume:6 Page:808-814
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Kwon Sung-Kyu^ORCID,Kwon Hyuk-Min,Han In-Shik,Jang Jae-Hyung,Oh Sun-Ho,Song Hyeong-Sub,Park Byoung-Seok,Chung Yi-Sun,Lee Jung-Hwan,Kim Si-Bum,Lee Ga-Won,Lee Hi-Deok^ORCID

Funder

Ministry of Trade, Industry & Energy and the Korea’s Semiconductor Research Consortium support program for the development of future semiconductor devices

National Research Foundation of Korea

Ministry of Science, ICT and Future Planning

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://xplorestaging.ieee.org/ielx7/6245494/8232486/08410367.pdf?arnumber=8410367

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2. Study on reliability improvement for p-type FeFinFET under negative-bias temperature instability stress with appropriate fluorine plasma treatment;Applied Physics Letters;2024-07-22

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4. Systematic Study on Predicting the Lifetime of Si pMOSFETs During NBTI Stress Based on Low-Frequency Noise;2023 International Conference on IC Design and Technology (ICICDT);2023-09-25

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