Reverse transient characteristics of a P-N junction diode due to minority carrier storage
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/4639142/31578/01473194.pdf?arnumber=1473194
Cited by 22 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Slow electrons impinging on dielectric solids. II. Implantation profiles, electron mobility, and recombination processes;Physical Review B;1997-07-15
2. Recent advances in the physics of silicon P-N junction solar cells including their transient response;Progress in Quantum Electronics;1987-01
3. Open-Circuit Voltage Decay in Solar Cells;Advances in Electronics and Electron Physics;1986
4. Mobility and surface recombination processes of primary electrons in dielectric systems during Auger electron spectroscopy;Physics Letters A;1984-07
5. Reverse recovery in p-n junction diodes with built-in drift fields;Solid-State Electronics;1983-11
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