High Power InP/Ga(In)AsSb DHBTs for Millimeter-Wave PAs: 14.5 dBm Output Power and 10.4 mw/μm<sup>2</sup> Power Density at 94 GHz-Reference-Cited by-同舟云学术

High Power InP/Ga(In)AsSb DHBTs for Millimeter-Wave PAs: 14.5 dBm Output Power and 10.4 mw/μm² Power Density at 94 GHz

Published:2022-10 Issue:4 Volume:2 Page:660-668
ISSN:2692-8388
Container-title:IEEE Journal of Microwaves
language:
Short-container-title:IEEE J. Microw.

Author:

Hamzeloui Sara¹^ORCID,Arabhavi Akshay M.¹^ORCID,Ciabattini Filippo¹^ORCID,Fluckiger Ralf¹,Marti Diego¹^ORCID,Ebrahimi Mojtaba¹,Ostinelli Olivier¹^ORCID,Bolognesi Colombo R.¹^ORCID

Affiliation:

1. Department of Information Technology and Electrical Engineering (D-ITET), ETH Zurich, Zurich, Switzerland

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

General Earth and Planetary Sciences,General Environmental Science

Link

http://xplorestaging.ieee.org/ielx7/9171629/9913286/09893131.pdf?arnumber=9893131

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1. Record 35% Power-Added Efficiency at 170 GHz in 300-nm InP/GaAsSb DHBTs;IEEE Microwave and Wireless Technology Letters;2024-08

2. G-Band Load-Pull Characterization of High-Efficiency Emitter-Fin InP/GaAsSb DHBTs;2024 15th Global Symposium on Millimeter-Waves & Terahertz (GSMM);2024-05-20

3. 94 GHz Two-Way-Combined Power Amplifiers with 14.2 dBm Peak Output Power in 300-nm InP/GaAsSb DHBT Technology;2024 15th Global Symposium on Millimeter-Waves & Terahertz (GSMM);2024-05-20

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5. Multi-Finger 250-nm InP/GaAsSb DHBTs with Record 37.3 % Class-A PAE at 94 GHz;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16