Analytical modeling and experimental evaluation of interconnect parasitic inductance on MOSFET switching characteristics-Reference-Cited by-同舟云学术

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Analytical modeling and experimental evaluation of interconnect parasitic inductance on MOSFET switching characteristics

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Container-title:Nineteenth Annual IEEE Applied Power Electronics Conference and Exposition, 2004. APEC '04.
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Author:

Xiao Y.,Shah H.,Chow T.P.,Gutmann R.J.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/9082/28818/01295856.pdf?arnumber=1295856

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Actual Reasons Involving Turn-Off Losses Improvement With Increasing Load and Gate Resistance in MOSFETs Enhanced With Kelvin Source;IEEE Transactions on Industrial Electronics;2024-01

3. Experimental Investigation and Analytical Modeling of Half-Bridge Switching Losses in Reconfigurable Lithium-Ion Cells;2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia);2023-05-22

4. A Prediction for Allowable Maximum Turn-on Speed of SiC Power Module by A Correlation Between Turn-on Transient Waveforms;2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-02-07

5. On Decoupling Capacitor Size in GaN-Based Power Converters;2022 IEEE 23rd Workshop on Control and Modeling for Power Electronics (COMPEL);2022-06-20

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