Large-signal microwave characteristics of resonant-tunneling high electron mobility transistors-Reference-Cited by-同舟云学术

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Large-signal microwave characteristics of resonant-tunneling high electron mobility transistors

Published:1999 Issue:2 Volume:46 Page:281-287
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Fukuyama H.,Maezawa K.,Yamamoto M.,Okazaki H.,Muraguchi M.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx4/16/16002/00740892.pdf?arnumber=740892

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A New XOR Structure Based on Resonant-Tunneling High Electron Mobility Transistor;VLSI Design;2009-08-19

2. Resonant Tunneling Diodes;Encyclopedia of RF and Microwave Engineering;2005-04-15

3. Series connection of resonant tunneling diodes for eliminating spurious oscillations;Electronics and Communications in Japan (Part II: Electronics);2001-12

4. A Monolithic Microwave-Integrated Circuit Doubler Using a Resonant-Tunneling High-Electron-Mobility Transistor;Japanese Journal of Applied Physics;2000-04-30

5. Quantum Well Detector, Modulator and Switch;Solid-State Science and Technology Library

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