Ultra-Fast Oxide Traps in Sub-20-nm DRAM Technology: from Characterization to Physical origin identification-Reference-Cited by-同舟云学术

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Ultra-Fast Oxide Traps in Sub-20-nm DRAM Technology: from Characterization to Physical origin identification

Published:2024-03-03 Issue: Volume: Page:1-3
ISSN:
Container-title:2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
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Author:

Wang Da¹,Liu Yong¹,Xue Yongkang¹,Ren Pengpeng¹,Sun Zixuan²,Wang Zirui²,Liu Yueyang³,Cheng Zhijun⁴,Yang Haiyang⁴,Liu Xiangli⁴,Wu Blacksmith⁴,Cao Kanyu⁴,Wang Runsheng²,Ji Zhigang¹,Huang Ru²

Affiliation:

1. Shanghai Jiao Tong University,Departure of Micro/Nano Electronics,Shanghai,China

2. Peking University,School of Integrated Circuits,Beijing,China

3. Institute of Semiconductors, Chinese Academy of Sciences,State Key Laboratory of Superlattices and Microstructures,Beijing,China

4. Changxin Memory Technologies, Inc.,HeFei,China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10511270/10511310/10511687.pdf?arnumber=10511687

Reference14 articles.

1. VLSI 85: VLSI design of digital systems

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