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A Novel RF Power Detector Based on Positive and Negative Thermistors Using Standard CMOS Technology

  • Published:2021-12 Issue:12 Volume:42 Page:1849-1852
  • ISSN:0741-3106
  • Container-title:IEEE Electron Device Letters
  • language:
  • Short-container-title:IEEE Electron Device Lett.

Author:

Li Jian-HuaORCID,Liao XiaopingORCID

Funder

National Natural Science Foundation of China

Scientific Research Foundation of Graduate School of Southeast University

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Simulation, Measurements and Analysis of the CMOS Temperature Sensor;2024 31st International Conference on Mixed Design of Integrated Circuits and System (MIXDES);2024-06-27

2. Sustainable Status Monitoring of MOSFETs in a Fully Integrated RF Amplifier by Thermal Voltage Sensing of On-Chip Thermopile;IEEE Solid-State Circuits Letters;2024

3. Enhanced linearity through high-order antisymmetric vibration for MEMS DC power sensor;Applied Physics Letters;2023-09-11

4. Research on thermocouple length for the thermoelectric RF power sensors in 0.18-µm CMOS technology;Third International Conference on Sensors and Information Technology (ICSI 2023);2023-05-15

5. A New RF-Thermal-Electric Power Detector With High Sensitivity and Inherent Linearity in 0.18-μm CMOS Technology;IEEE Microwave and Wireless Technology Letters;2023-05
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