Room Temperature Cu-Cu Direct Bonding Using Wetting/Passivation Scheme for 3D Integration and Packaging-Reference-Cited by-同舟云学术

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Room Temperature Cu-Cu Direct Bonding Using Wetting/Passivation Scheme for 3D Integration and Packaging

Published:2022-06-12 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
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Author:

Hong Zhong-Jie¹,Liu Demin¹,Hsieh Shu-Ting¹,Hu Han-Wen¹,Weng Ming-Wei¹,Cho Chih-I¹,Liu Jui-Han¹,Chen Kuan-Neng¹

Affiliation:

1. National Yang Ming Chiao Tung University,Hsinchu,Taiwan

Funder

Ministry of Science and Technology

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9830116/9830138/09830175.pdf?arnumber=9830175

Reference7 articles.

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1. Research progress of hybrid bonding technology for three-dimensional integration;Microelectronics Reliability;2024-04

2. Interdiffusion mechanism and thermal conductance at the interfaces in Cu-to-Cu bonds achieved by coating nanolayers;Surfaces and Interfaces;2024-03

3. The HRDL Interposer Technology Using Metal/Polymer Hybrid Bonding and Its Characteristics;IEEE Transactions on Materials for Electron Devices;2024

4. Low temperature Cu/SiO2 hybrid bonding via 〈1 1 1〉-oriented nanotwinned Cu with Ar plasma surface modification;Applied Surface Science;2023-11

5. 20 µm Copper Micro-Bump Bonding Through a Silver Metallization for Advanced Packaging Under a Low-Pressure Condition;2023 24th European Microelectronics and Packaging Conference & Exhibition (EMPC);2023-09-11

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