Performance and Low-Frequency Noise of 22-nm FDSOI Down to 4.2 K for Cryogenic Applications-Reference-Cited by-同舟云学术

Performance and Low-Frequency Noise of 22-nm FDSOI Down to 4.2 K for Cryogenic Applications

Published:2020-11 Issue:11 Volume:67 Page:4563-4567
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Cardoso Paz Bruna^ORCID,Casse Mikael^ORCID,Theodorou Christoforos,Ghibaudo Gerard^ORCID,Kammler Thorsten,Pirro Luca,Vinet Maud,de Franceschi Silvano,Meunier Tristan,Gaillard Fred

Funder

French Authorities within the frame of NANO2022 Project, the ERC Synergy QuCube

EU H2020 RIA Project SEQUENCE

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9237191/09201379.pdf?arnumber=9201379

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