Vertical Power SiC MOSFETs with High-k Gate Dielectrics and Superior Threshold Voltage Stability-Reference-Cited by-同舟云学术

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Vertical Power SiC MOSFETs with High-k Gate Dielectrics and Superior Threshold Voltage Stability

Published:2020-09 Issue: Volume: Page:
ISSN:
Container-title:2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

Wirths Stephan,Arango Yulieth,Mihaila Andrei,Bellini Marco,Romano Gianpaolo,Alfieri Giovanni,Belanche Manuel,Knoll Lars,Bianda Enea,Mengotti Elena

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9163811/9170028/09170122.pdf?arnumber=9170122

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigations of 4H‐SiC trench MOSFET with integrated high‐K deep trench and gate dielectric;IET Power Electronics;2024-04-23

2. Theory and Design of Novel Power Poly-Si/SiC Heterojunction Tunneling Transistor Structure;IEEE Transactions on Electron Devices;2023-11

3. Investigation on Switching Characteristics of 3.3kV SiC Power MOSFETs with SiO<sub>2</sub>/ SiN Gate Stack;Materials Science Forum;2023-06-05

4. Static Performance and Threshold Voltage Stability Improvement of Al₂O₃/LaAlO₃/SiO₂ Gate-Stack for SiC Power MOSFETs;IEEE Transactions on Electron Devices;2022-02

5. Analysis and Modeling of Temperature Dependence of I-V behavior in Silicon Carbide MOSFETs;2021 21st International Symposium on Power Electronics (Ee);2021-10-27

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