A concurrent dual-band low-noise amplifier for K- and Ka-band applications in SiGe BiCMOS technology
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx7/6679378/6694817/06695112.pdf?arnumber=6695112
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A 26/38.5-GHz Dual-band Low Noise Amplifier in 65-nm CMOS Technology;2023 International Conference on Microwave and Millimeter Wave Technology (ICMMT);2023-05-14
2. A Concurrent 26/48 GHz Low-Noise Amplifier With an Optimal Dual-Band Noise Matching Method Using GaAs 0.15 μm pHEMT;IEEE Transactions on Circuits and Systems II: Express Briefs;2023
3. Multi-Band Millimeter-Wave Circuits for Spectrum Aggregation in B5G Era: A Tutorial;IEEE Transactions on Circuits and Systems II: Express Briefs;2023
4. Design of a Dual Band Low Noise Amplifier at 1.1GHz and 2.4GHz;2022 IEEE International RF and Microwave Conference (RFM);2022-12-19
5. Design and analysis of a 1.1 and 2.4 GHz concurrent dual-band low noise amplifier for multiband radios;AEU - International Journal of Electronics and Communications;2021-05
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