Transport model in n/sup ++/-poly/SiO/sub x//SiO/sub 2//p-sub MOS capacitors for low-voltage nonvolatile memory applications-Reference-Cited by-同舟云学术

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Transport model in n/sup ++/-poly/SiO/sub x//SiO/sub 2//p-sub MOS capacitors for low-voltage nonvolatile memory applications

Published:2000 Issue:2 Volume:47 Page:372-377
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Irrera F.,Marrangelo L.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/17819/00822283.pdf?arnumber=822283

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Engineered Barriers With Hafnium Oxide for Nonvolatile Application;IEEE Transactions on Electron Devices;2006-09

2. Oxygen to silicon ratio determination of SiOxHy thin films;Thin Solid Films;2005-12

3. Improvement of the current-voltage characteristics of a tunneling dielectric by adopting a Si3N4∕SiO2∕Si3N4 multilayer for flash memory application;Applied Physics Letters;2005-10-10

4. On the reliability of ZrO2 films for VLSI applications;Microelectronics Reliability;2004-05

5. Monitoring of Defects in Thermal Oxides during Electrical Stress;Solid State Phenomena;2001-11

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