Process and Simulation design of Silicon-On-Insulator (SOI) NMOS
Author:
Affiliation:
1. National Cheng Kung University,Institute of Microelectronics, Department of Electrical Engineering,Tainan,Taiwan,701
2. Taiwan Semiconductor Research Institute,Hsinchu,Taiwan,300
Funder
Ministry of Science and Technology
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10343386/10343419/10344290.pdf?arnumber=10344290
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1. A 0.3 V, Rail-to-Rail, Ultralow-Power, Non-Tailed, Body-Driven, Sub-Threshold Amplifier
2. 0.3 V ultra-low power sensor interface for EMG
3. The potential of ultrathin-film SOI devices for low-power and high-speed applications;Kado;IEICE Transactions on Electronics,1997
4. SOI for low-power low-voltage - bulk versus SOI
5. FDSOI Process Technology for Subthreshold-Operation Ultralow-Power Electronics
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