True Dose Rate Effect of the ELDRS Conversional Model
Author:
Affiliation:
1. National Research Nuclear University MEPhI (Moscow Engineering Physics Institute),Moscow,Russian Federation
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9857595/9857677/09857689.pdf?arnumber=9857689
Reference9 articles.
1. Study of ELDRS using the conversion model of the radiation-induced interface trap buildup;pershenkov;RADECS Workshop 2018 & The 2nd International Conference on Radiation Effects of Electronic Devices,2018
2. Thermal-stress effects and enhanced low dose rate sensitivity in linear bipolar ICs
3. Interface trap generation in silicon dioxide when electrons are captured by trapped holes
4. Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates
5. Simulation of bipolar transistors degradation at various dose rates and electrical modes for high dose conditions
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