High-Performance PbS NCs-Graphene Phototransistor With Memory Function-Reference-Cited by-同舟云学术

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High-Performance PbS NCs-Graphene Phototransistor With Memory Function

Published:2024-06-01 Issue:11 Volume:36 Page:753-756
ISSN:1041-1135
Container-title:IEEE Photonics Technology Letters
language:
Short-container-title:IEEE Photon. Technol. Lett.

Author:

Che Y. L.¹,Cao X. L.¹^ORCID,Yao J. Q.²^ORCID

Affiliation:

1. College of Ocean Science and Engineering, Shandong University of Science and Technology, Qingdao, China

2. Key Laboratory of Opto-Electronics Information Technology (Tianjin University), Ministry of Education, School of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin, China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/68/10509769/10520280.pdf?arnumber=10520280

Reference27 articles.

1. PbE (E = S, Se) Colloidal Quantum Dot-Layered 2D Material Hybrid Photodetectors

2. N-Type Colloidal-Quantum-Dot Solids for Photovoltaics

3. Reducing charge trapping in PbS colloidal quantum dot solids

4. Highly Efficient and Air-Stable Infrared Photodetector Based on 2D Layered Graphene–Black Phosphorus Heterostructure

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Graphene–PbS Quantum Dot Heterostructure for Broadband Photodetector with Enhanced Sensitivity;Sensors;2024-08-26

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