Nanoscale MoS<sub>2</sub> Transistors on Polyimide for Radio-Frequency Operation-Reference-Cited by-同舟云学术

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Nanoscale MoS₂ Transistors on Polyimide for Radio-Frequency Operation

Published:2024-06-24 Issue: Volume:13 Page:1-2
ISSN:
Container-title:2024 Device Research Conference (DRC)
language:
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Author:

Reato E.¹,Palacios P.²,Yang J. A.³,Wahid S.³,Jaikissoon M.³,Ko J.-S.³,Daus A.⁴,Saeed M.⁵,Saraswat K. C.³,Negra R.²,Pop E.³,Lemme M. C.¹

Affiliation:

1. RWTH Aachen Univ.,Chair of Electronic Devices,Germany

2. RWTH Aachen Univ.,Chair of High Frequency Electronics,Germany

3. Stanford Univ.,Electrical Eng.,USA

4. Freiburg Univ.,Dept. of Microsystems Eng.,Germany

5. In-CirT GmbH,Germany

Funder

Stanford SystemX Alliance

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10605129/10605242/10605276.pdf?arnumber=10605276

Reference9 articles.

1. 2D materials for future heterogeneous electronics

2. Effect of Top-Gate Dielectric Deposition on the Performance of Indium Tin Oxide Transistors

3. Strain-Enhanced Mobility of Monolayer MoS₂

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