Multiple-Throw Millimeter-Wave FET Switches for Frequencies from 60 up to 120 GHz

Author:

Kallfass I.1,Diebold S.2,Massler H.2,Koch S.3,Seelmann-Eggebert M.2,Leuther A.2

Affiliation:

1. Fraunhofer Institute for Applied Solid-State Physics (IAF), Tullastrasse 72, D-79108 Freiburg, Germany, ingmar.kallfass@iaf.fraunhofer.de

2. Fraunhofer Institute for Applied Solid-State Physics (IAF), Tullastrasse 72, D-79108 Freiburg, Germany

3. Sony Deutschland GmbH, Hedelfinger Strasse 61, D-70327 Stuttgart, Germany

Publisher

IEEE

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2. A 90-GHz Asymmetrical Single-Pole Double-Throw Switch With >19.5-dBm 1-dB Compression Point in Transmission Mode Using 55-nm Bulk CMOS Technology;IEEE Transactions on Circuits and Systems I: Regular Papers;2021-11

3. A 165-GHz Transmitter With 10.6% Peak DC-to-RF Efficiency and 0.68-pJ/b Energy Efficiency in 65-nm Bulk CMOS;IEEE Transactions on Microwave Theory and Techniques;2016-12

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