A Tunable Active Clamping Source Based High Frequency Single-Switch Resonant Gate Driving Circuit with Duty Cycle and Frequency Modulation Capability
Author:
Affiliation:
1. Shanghai Jiao Tong University,Dept. of Electrical Engineering,Shanghai,P.R China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx8/10557246/10557256/10557375.pdf?arnumber=10557375
Reference6 articles.
1. Frequency Doubler Gate Drive Circuit Suitable for High-Frequency Applications
2. A High Frequency Resonant Gate Driver for SiC MOSFETs
3. A Resonant MOSFET Gate Driver With Efficient Energy Recovery
4. 1 kW MHz Wideband Class E Power Amplifier
5. A Multiresonant Gate Driver for High-Frequency Resonant Converters
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