Independent-gate and tied-gate FinFET SRAM Circuits: Design guidelines for reduced area and enhanced stability-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Independent-gate and tied-gate FinFET SRAM Circuits: Design guidelines for reduced area and enhanced stability

Published:2007-12 Issue: Volume: Page:
ISSN:
Container-title:2007 Internatonal Conference on Microelectronics
language:
Short-container-title:

Author:

Tawfik Sherif A.,Zhiyu Liu ,Kursun Volkan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4489831/4497639/04497686.pdf?arnumber=4497686

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Power and Stability Optimization of High Performance SRAM Cell Using Jaya Algorithms for Low Power Drone;2024 IEEE 3rd International Conference on Electrical Power and Energy Systems (ICEPES);2024-06-21

2. A CNTFET based stable, single-ended 7T SRAM cell with improved write operation;Physica Scripta;2024-02-09

3. Optimization Techniques for Reliable Low Leakage GNRFET-Based 9T SRAM;IEEE Transactions on Device and Materials Reliability;2022-12

4. Design and Performance Analysis of Low Power and High Throughput of Analog Data Compression and Decompression using ANN in 32nm FinFET Technology;International Journal of Circuits, Systems and Signal Processing;2021-07-28

5. FinFET based Design and Performance Analysis of Nano-processor for Low Area, Low Power and Minimum Delay using 32nm;International Journal of Circuits, Systems and Signal Processing;2021-07-22

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP