X-Band High-Efficiency High-Power GaN Power Amplifier Based on Edge-Triggered Gate Modulation-Reference-Cited by-同舟云学术

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X-Band High-Efficiency High-Power GaN Power Amplifier Based on Edge-Triggered Gate Modulation

Published:2020-09 Issue:9 Volume:30 Page:884-887
ISSN:1531-1309
Container-title:IEEE Microwave and Wireless Components Letters
language:
Short-container-title:IEEE Microw. Wireless Compon. Lett.

Author:

Fang Wen-Rao^ORCID,Huang Wen-Hua,Huang Wen-Hui,Li Jia-Wei,Fu Chao,Wang Lu-Lu,He Tian-Wei,Cao Yu

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Link

http://xplorestaging.ieee.org/ielx7/7260/9185114/09167440.pdf?arnumber=9167440

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Gigahertz and terahertz transistors for 5G, 6G, and beyond mobile communication systems;Applied Physics Reviews;2024-08-19

2. Study on the Degradation Mechanism of GaN MMIC Power Amplifiers Under On-State With High Drain Bias;IEEE Transactions on Electron Devices;2024-08

3. A Sub-Nanosecond Gate Bias-Switching Circuit for GaN RF Power Amplifiers;IEEE Microwave and Wireless Technology Letters;2024-02

4. Design and Implementation of Low Parasitic Inductance Bias Circuit for High-Power Pulsed Power Amplifiers;Electronics;2023-03-17

5. Power Amplifier Design for 25.1 km Long-Distance Transmission Under 214 km/h High-Speed Movement of Air-to-Ground Wireless Self-Assembled Network Nodes;IEEE Access;2023

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