Performance Comparison of Broadband Traveling Wave Amplifiers in 130-nm SiGe:C SG13G2 and SG13G3 BiCMOS Technologies
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics
Link
http://xplorestaging.ieee.org/ielx7/7260/9448609/09381228.pdf?arnumber=9381228
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A Fully-Differential Travelling-Wave Amplifier up to 110 GHz in a 22 nm FD-SOI CMOS Technology;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18
2. Analysis and Implementation of DC-coupled Compact and Power Efficient Lumped Driver for Single-Ended Optical Modulators in SiGe 250 nm BiCMOS Technology;2023 IEEE International Symposium on Circuits and Systems (ISCAS);2023-05-21
3. A 128 Gb/s 7-Tap FIR Filter in 130 nm SiGe BiCMOS for High-Speed Channel Equalization;IEEE Microwave and Wireless Technology Letters;2023-02
4. Tunable and Highly Power Efficient Traveling Wave Amplifier in SiGe BiCMOS for Optical Modulators;2023 IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems;2023-01-22
5. A Linear Modulator Driver With Over 70-GHz Bandwidth 21.8-dB Gain and 3.4-Vppd Output Swing for Beyond 120-GBd Optical Links;IEEE Transactions on Microwave Theory and Techniques;2023
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