A 150–175-GHz 30-dB S 21 Power Amplifier With 125-mW P out and 16.2% PAE Using InP HBT
Author:
Affiliation:
1. Teledyne Scientific Company, Thousand Oaks, CA, USA
Funder
Virginia Diodes Inc.
National Aeronautics and Space Administration
Jet Propulsion Laboratory
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics
Link
http://xplorestaging.ieee.org/ielx7/7260/9789504/09680782.pdf?arnumber=9680782
Reference11 articles.
1. An 18 dBm 155-180 GHz SiGe Power Amplifier Using a 4-Way T-Junction Combining Network
2. A 190–210 GHz power amplifier with 17.7–18.5 dBm output power and 6.9–8.5% PAE;ahmed;IEEE MTT-S Int Microw Symp Dig,2021
3. 50 – 250 GHz High-Gain Power Amplifier MMICs in 250-nm InP HBT
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