Surface Protecting and Particles Removing after Wafer Sawing for Die-to-wafer Hybrid Bonding
Author:
Affiliation:
1. Fudan University,School of Microelectronics,Shanghai,China
2. Southwest University,School of Electronic Information Engineering,Chongqing,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10491594/10491891/10491982.pdf?arnumber=10491982
Reference9 articles.
1. Ultra-High Strength Cu-Cu Bonding under Low Thermal Budget for Chiplet Heterogeneous Applications
2. Heterogeneous and 3D Integration at DARPA
3. Scheme for Multi-Chiplet Integration With Low Thermal Budget by Asymmetric Cu-Cu Bonding With Au Passivation Bonding Structure
4. Towards $5\mu \mathrm{m}$ interconnection pitch with Die-to-Wafer direct hybrid bonding
5. Interfacial morphology and grain orientation during bumpless direct Cu bonding
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