Simulation of Total Ionising Dose on LDMOS devices for High Energy Physics applications-Reference-Cited by-同舟云学术

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Simulation of Total Ionising Dose on LDMOS devices for High Energy Physics applications

Published:2011-09 Issue: Volume: Page:
ISSN:
Container-title:2011 12th European Conference on Radiation and Its Effects on Components and Systems
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Author:

Fernandez-Martinez P.,Palomo F.R.,Diez S.,Hidalgo S.,Ullan M.,Flores D.,Sorge R.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6123710/6131283/06131412.pdf?arnumber=6131412

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Total Ionizing Dose Hardening of Planar SOI MOSFET Through an Optimal Design Combining Embedded Void and H-Gate Structures;IEEE Electron Device Letters;2023-10

2. Investigation of Negative Bias Effect on Radiation Hardening for Double SOI Technology;IEEE Transactions on Nuclear Science;2022-04

3. Total Ionizing Dose Effects on Nanosheet Gate-All-Around MOSFETs Built on Void Embedded Silicon on Insulator Substrate;IEEE Electron Device Letters;2021-10

4. Evaluation of total-ionizing-dose effects on reconfigurable field effect transistors and SRAM circuits;Semiconductor Science and Technology;2021-07-09

5. Improved Model on Buried-Oxide Damage Induced by Total-Ionizing-Dose Effect for HV SOI LDMOS;IEEE Transactions on Electron Devices;2021-04

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