A 3.3-V single power supply 16-Mb nonvolatile virtual DRAM using a NAND flash memory technology-Reference-Cited by-同舟云学术

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A 3.3-V single power supply 16-Mb nonvolatile virtual DRAM using a NAND flash memory technology

Published:1997 Issue:11 Volume:32 Page:1748-1757
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Tae-Sung Jung ,Do-Chan Choi ,Sung-Hee Cho ,Myong-Jae Kim ,Seung-Keun Lee ,Byung-Soon Choi ,Jin-Sun Yum ,San-Hong Kim ,Dong-Gi Lee ,Jong-Chang Son ,Myung-Sik Yong ,Heung-Kwun Oh ,Sung-Bu Jun ,Woung-Moo Lee ,Haq E.,Kang-Deog Suh ,Ali S.B.,Hyung-Kyu Lim

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx3/4/13972/00641697.pdf?arnumber=641697

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Principle of Nand Flash Memory;Nand Flash Memory Technologies;2015-12-25

2. Introduction;Nand Flash Memory Technologies;2015-12-25

3. Program and erase of NAND memory arrays;Inside NAND Flash Memories;2010

4. Design of Unique NAND Flash Memory Cells with Low Program Disturbance Utilizing Novel Booster Line;Japanese Journal of Applied Physics;2006-06-08

5. Single-chip computers with microelectromechanical systems-based magnetic memory (invited);Journal of Applied Physics;2000-05

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