Ultralow-threshold Continuous-wave Quantum Dot Lasers Based on Minituarized Bound States in the Continuum
Author:
Affiliation:
1. Sun Yat-Sen University,State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology,Guangzhou,China,510275
Funder
National Natural Science Foundation of China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10088439/10088450/10088641.pdf?arnumber=10088641
Reference21 articles.
1. Extremely high temperature (220°C) continuous-wave operation of 1300-nm-range quantum-dot lasers
2. p-doped 1.3μm InAs∕GaAs quantum-dot laser with a low threshold current density and high differential efficiency
3. Electrically pumped continuous-wave III–V quantum dot lasers on silicon
4. 1.3 μm InAs quantum dot laser with To=161 K from 0 to 80 °C
5. Observation of trapped light within the radiation continuum
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