The Anomalous Effect of Oxygen Ratio on the Mobility and Photobias Stability of Sputtered Zinc–Tin–Oxide Transistors-Reference-Cited by-同舟云学术

The Anomalous Effect of Oxygen Ratio on the Mobility and Photobias Stability of Sputtered Zinc–Tin–Oxide Transistors

Published:2014-06 Issue:6 Volume:61 Page:2071-2077
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Yang Bong Seob,Oh Seungha,Kim Yoon Jang,Han Sang Jin,Lee Hong Woo,Kim Hyuk Jin,Kim Sungmin,Park Hui Kyung,Heo Jaeyeong,Jeong Jae Kyeong,Kim Hyeong Joon

Funder

Industrial Strategic Technology Development Program through the MKE/KEIT

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/6817621/06809162.pdf?arnumber=6809162

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