Improvement in the Performance of P-Type Tunnel Oxide Passivated Contact Solar Cell With Selective Tunneling Junctions Underneath the Contacts on Front Side-Reference-Cited by-同舟云学术

Improvement in the Performance of P-Type Tunnel Oxide Passivated Contact Solar Cell With Selective Tunneling Junctions Underneath the Contacts on Front Side

Published:2023-03 Issue:2 Volume:13 Page:236-241
ISSN:2156-3381
Container-title:IEEE Journal of Photovoltaics
language:
Short-container-title:IEEE J. Photovoltaics

Author:

Sadhukhan Sourav¹,Acharya Shiladitya¹,Panda Tamalika¹,Mandal Nabin Chandra¹,Bose Sukanta¹,Das Gourab¹,Maity Santanu¹^ORCID,Chaudhuri Partha¹,Chakraborty Susanta²^ORCID,Chakrabarti P.³^ORCID,Saha Hiranmay¹

Affiliation:

1. DST-IIEST Solar PV Hub, School of Advanced Materials, Green Energy and Sensor Systems, Indian Institute of Engineering Science and Technology Shibpur, Howrah, India

2. Department of Computer Science and Technology, IIEST Shibpur, Howrah, India

3. Indian Institute of Technology BHU, Varanasi, India

Funder

DST Solar PV Hub Phase II at IIEST Shibpur

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/5503869/10048669/10036073.pdf?arnumber=10036073

Reference51 articles.

1. Electrons and holes in solar cells with partial rear contacts