Nonlinear properties of IMPATT devices-Reference-Cited by-同舟云学术

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Nonlinear properties of IMPATT devices

Published:1973 Issue:2 Volume:61 Page:153-182
ISSN:0018-9219
Container-title:Proceedings of the IEEE
language:
Short-container-title:Proc. IEEE

Author:

Schroeder W.E.,Haddad G.I.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/5/31165/01450932.pdf?arnumber=1450932

Cited by 57 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of temperature on avalanche region width and DC to RF conversion efficiency of the p+nn−n+ 4H–SiC impact avalanche transit time diodes;Applied Physics A;2016-05-03

2. Si/SiC-based DD hetero-structure IMPATTs as MM-wave power-source: a generalized large-signal analysis;Journal of Semiconductors;2015-06

3. Large-signal modeling of hexagonal (4H-) SiC based double drift transit time device as high-power MM-wave source at W-band window frequency;16th International Workshop on Physics of Semiconductor Devices;2012-10-15

4. Non-Periodic Current Oscillations in the Gunn-Effect Device with the Impact-Ionization Effect;Journal of the Physical Society of Japan;1995-05-15

5. Satellite Crosslinks;Satellite Communications;1991

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