Surface Energy Characterization for Die-Level Cu Hybrid Bonding-Reference-Cited by-同舟云学术

Surface Energy Characterization for Die-Level Cu Hybrid Bonding

Published:2022-05 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE 72nd Electronic Components and Technology Conference (ECTC)
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Author:

Sakuma Katsuyuki¹,Yu Roy¹,Belyansky Michael¹,Bergendahl Marc A¹,Gomez Juan-Manuel¹,Skordas Spyridon¹,Knickerbocker John¹,McHerron Dale¹,Li Ming²,Cheung Yiu Ming²,Cheung So Siu²,Kwok So Ying²,Ho Fan Chun²,Lau Siu Wing²

Affiliation:

1. IBM T. J. Watson Research Center,Albany,NY,U.S.A.

2. ASM Pacific Technology,Tsing Yi,Hong Kong

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9816066/9816372/09816543.pdf?arnumber=9816543

Reference10 articles.

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4. Reliability of a 300-mm-compatible 3DI technology based on hybrid Cu-adhesive wafer bonding;yu;2009 Symposium on VLSI Technology,2009

5. A 300-mm wafer-level three-dimensional integration scheme using tungsten through-silicon via and hybrid Cu-adhesive bonding

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