A V-band, high gain, low noise, monolithic PHEMT amplifier mounted on a small hermetically sealed metal package-Reference-Cited by-同舟云学术

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A V-band, high gain, low noise, monolithic PHEMT amplifier mounted on a small hermetically sealed metal package

Published:1995 Issue:2 Volume:5 Page:48-49
ISSN:1051-8207
Container-title:IEEE Microwave and Guided Wave Letters
language:
Short-container-title:IEEE Microw. Guid. Wave Lett.

Author:

Itoh Y.,Horiie Y.,Nakahara K.,Yoshida N.,Katoh T.,Takagi T.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

General Physics and Astronomy,General Engineering

Link

http://xplorestaging.ieee.org/ielx4/75/8002/00342148.pdf?arnumber=342148

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hot-electron effects on AlGaAs/InGaAs/GaAs PHEMTs under accelerated DC stresses;Microelectronics Reliability;2006-12

2. Stabilization of millimeter‐wave multistage amplifier using amplitude‐and‐phase setting circuits;Electronics and Communications in Japan (Part II: Electronics);2001-12

3. Effects of hot-electron stress on electrical performances in AlGaAs/InGaAs pseudomorphic high electron transistors;Journal of Electronic Materials;2001-07

4. MMIC development for millimeter-wave space application;IEEE Transactions on Microwave Theory and Techniques;2001

5. Gallium arsenide heterostructures;Handbook of Advanced Electronic and Photonic Materials and Devices;2001

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