High-Gap Nb-AlN-NbN SIS Junctions for Frequency Band 790–950 GHz-Reference-Cited by-同舟云学术

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High-Gap Nb-AlN-NbN SIS Junctions for Frequency Band 790–950 GHz

Published:2016-01 Issue:1 Volume:6 Page:127-132
ISSN:2156-342X
Container-title:IEEE Transactions on Terahertz Science and Technology
language:
Short-container-title:IEEE Trans. THz Sci. Technol.

Author:

Khudchenko Andrey,Baryshev Andrey M.,Rudakov Kirill I.,Dmitriev Pavel M.,Hesper Ronald,de Jong Leo,Koshelets Valery P.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Radiation

Link

http://xplorestaging.ieee.org/ielx7/5503871/7387802/07365495.pdf?arnumber=7365495

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