Physical Insights of Si-Core-SiGe-Shell Gate-All-Around Nanosheet pFET for 3 nm Technology Node-Reference-Cited by-同舟云学术

Physical Insights of Si-Core-SiGe-Shell Gate-All-Around Nanosheet pFET for 3 nm Technology Node

Published:2023-06 Issue:6 Volume:70 Page:3365-3371
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Xu Haoqing¹^ORCID,Yao Jiaxin¹^ORCID,Yang Zhizhen¹,Cao Lei¹^ORCID,Zhang Qingzhu¹^ORCID,Li Yongliang¹^ORCID,Du Anyan¹^ORCID,Yin Huaxiang¹^ORCID,Wu Zhenhua¹^ORCID

Affiliation:

1. Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China

Funder

NSFC

MOST

International Partnership Program of Chinese Academy of Sciences

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10136238/10112642.pdf?arnumber=10112642

Reference39 articles.

1. A Novel Dry Selective Etch of SiGe for the Enablement of High Performance Logic Stacked Gate-All-Around NanoSheet Devices

2. Quantum size effect in core-shell structured silicon-germanium nanowires

3. Physical Insights on Quantum Confinement and Carrier Mobility in Si, Si0.45Ge0.55, Ge Gate-All-Around NSFET for 5 nm Technology Node

4. SiGe nanowires: Structural stability, quantum confinement, and electronic properties

5. Stacked Gate-All-Around Nanosheet pFET with Highly Compressive Strained Si1-xGex Channel

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