Correlating Interface and Border Traps With Distinctive Features of <i>C</i>–<i>V</i> Curves in Vertical Al$_{\text{2}}$O$_{\text{3}}$/GaN MOS Capacitors-Reference-Cited by-同舟云学术

Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical Al$_{\text{2}}$O$_{\text{3}}$/GaN MOS Capacitors

Published:2023 Issue: Volume: Page:1-6
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Zagni Nicolò¹^ORCID,Fregolent Manuel²,Verzellesi Giovanni³^ORCID,Marcuzzi Alberto²^ORCID,Santi Carlo De²^ORCID,Meneghesso Gaudenzio²^ORCID,Zanoni Enrico²^ORCID,Treidel Eldad Bahat⁴^ORCID,Brusaterra Enrico⁴^ORCID,Brunner Frank⁴,Hilt Oliver⁴^ORCID,Meneghini Matteo²^ORCID,Pavan Paolo¹^ORCID

Affiliation:

1. Department of Engineering “Enzo Ferrari”, University of Modena and Reggio Emilia, Modena, Italy

2. Department of Information Engineering, University of Padova, Padova, Italy

3. Department of Sciences and Methods for Engineering (DISMI) and the EN and TECH Center, University of Modena and Reggio Emilia, Reggio Emilia, Italy

4. Ferdinand-Braun-Institut (FBH), Berlin, Germany

Funder

Electronic Component Systems for European Leadership Joint Undertaking (ECSEL JU) within the project “YESvGaN”

European Union’s Horizon 2020 Research and Innovation Programme, and Germany, France, Belgium, Austria, Sweden, Spain, and Italy

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/4358746/10329308.pdf?arnumber=10329308

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Experimental and Numerical Analysis of Off-State Bias Induced Instabilities in Vertical GaN-on-Si Trench MOSFETs;IEEE Transactions on Power Electronics;2024-11

2. Vertical GaN Trench‐MOSFETs Fabricated on Ammonothermally Grown Bulk GaN Substrates;physica status solidi (a);2024-06-02