Low-Temperature Fabrication of Indium Oxynitride Thin-Film Transistors via Plasma-Assisted Solution Process
Author:
Affiliation:
1. School of Optoelectronic Engineering, Xi’an Technological University, Xi’an, China
2. School of Optics and Photonics, Beijing Institute of Technology, Beijing, China
3. Beijing BOE Display Technology Company Ltd., Beijing, China
Funder
National Key Research and Development Program of China
“Belt and Road” Innovative Talent Exchange Program for Foreign Experts
Natural Science Basic Research Program of Shaanxi Province
Youth Innovation Team of Shaanxi Universities
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10159202/10131915.pdf?arnumber=10131915
Reference25 articles.
1. Low-Temperature, Nontoxic Water-Induced Metal-Oxide Thin Films and Their Application in Thin-Film Transistors
2. Room-Temperature Postannealing Reduction via Aqueous Sodium Borohydride and Composition Optimization of Fully Solution-Processed Indium Tin Oxide Films
3. Impact of NH3 plasma treatment for solution-processed indium oxide thin-film transistors with low thermal budget
4. Self-Aligned Top-Gate Amorphous Indium Zinc Oxide Thin-Film Transistors Exceeding Low-Temperature Poly-Si Transistor Performance
5. An ‘aqueous route’ for the fabrication of low-temperature-processable oxide flexible transparent thin-film transistors on plastic substrates
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Enhancement of Electrical Stability in Solution Processed In2O3 TFT by an Oxygen Plasma-Assisted Treatment;IEEE Transactions on Electron Devices;2023-11
2. Tailoring thin film transistor performance through plasma reactant manipulation in indium oxynitride films;Journal of Materials Chemistry C;2023
3. Reliable Holistic-Prediction of Ultra-Low Water Vapor Permeation in High-Performance Thin Film Encapsulation by Simulation;2023
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