An over 110-GHz InP HEMT flip-chip distributed baseband amplifier with inverted microstrip line structure for optical transmission systems-Reference-Cited by-同舟云学术

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An over 110-GHz InP HEMT flip-chip distributed baseband amplifier with inverted microstrip line structure for optical transmission systems

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Container-title:24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu
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Author:

Masuda S.,Hirose T.,Takahashi T.,Nishi M.,Yokokawa S.,Iijima S.,Ono K.,Hara N.,Joshin K.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/8121/22472/01049038.pdf?arnumber=1049038

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2. Differential distributed amplifier with 2:1 selector in InP DHBT for 100 Gbit/s operation;Electronics Letters;2010

3. A 90-Gb/s Modulator Driver IC Based on Functional Distributed Circuits for Optical Transmission Systems;IEICE Transactions on Electronics;2010

4. Bandwidth Potential of Cascode HBT-Based TWAs as a Function of Transistor ${ f} _{\max} /{ f} _{ T}$ Ratio;IEEE Transactions on Microwave Theory and Techniques;2008-06

5. A 52-GHz 8.5-dB Traveling-Wave Amplifier in 0.13-$\mu$m Standard CMOS Process;IEEE Transactions on Microwave Theory and Techniques;2008-05

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