Highly Selective Si vs. SiGe and SiGe vs. Ge Wet Etch for Sub 2nm Applications
Author:
Affiliation:
1. Electronic Materials Research and Developmennt Avantor,Bridgewater,NJ,USA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx8/10545359/10545360/10545527.pdf?arnumber=10545527
Reference6 articles.
1. SiGe vs. Si Selective Wet Etching for Si Gate-all-Around
2. Tunable Silicon-Germanium and Silicon Selective Etch in 5-Nanometer and Below Applications
3. Germanium compatible photoresist strippers and residue cleaners for 5nm and below technology nodes
4. Wet chemical etching of Si, Si1-xGex and Ge in HF: H2O2:CH3COOH;Hollander;J. Electrochem. Soc.,2010
5. Study of the Anisotropic Wet Etching of Nanoscale Structures in Alkaline Solutions
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