Theory of the single contact electron beam induced current effect-Reference-Cited by-同舟云学术

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Theory of the single contact electron beam induced current effect

Published:2000-04 Issue:4 Volume:47 Page:897-899
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Ong V.K.S.,Lau K.T.,Ma J.G.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/18018/00831013.pdf?arnumber=831013

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. TCAD Studies on the Determination of Diffusion Length for the Planar-Collector EBIC Configuration With Any Size of the Schottky Contact;IEEE Transactions on Electron Devices;2015-09

2. Contactless junction contrast of HgCdTe n-on-p-type structures obtained by reactive ion etching induced p-to-n conversion;Journal of Electronic Materials;2001-06

3. Extracting diffusion length using the single contact electron beam induced current technique;Solid-State Electronics;2000-09

4. Contrast imaging of junctions and recombination activity in MWIR HgCdTe reactive-ion etched n-on-p photodiodes;COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices

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