Static random access memories based on resonant interband tunneling diodes in the InAs/GaSb/AlSb material system-Reference-Cited by-同舟云学术

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Static random access memories based on resonant interband tunneling diodes in the InAs/GaSb/AlSb material system

Published:1995-05 Issue:5 Volume:16 Page:178-180
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Shen J.,Kramer G.,Tehrani S.,Goronkin H.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/55/8662/00382232.pdf?arnumber=382232

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