Nanostructured THz Gunn diode using integration of the side-contact and field-plate technologies-Reference-Cited by-同舟云学术

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Nanostructured THz Gunn diode using integration of the side-contact and field-plate technologies

Published:2023-09-17 Issue: Volume: Page:
ISSN:
Container-title:2023 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
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Author:

Hajo Ahid S.¹,Cicek Deniz¹,Celik Yunus¹,Dadgar Armin²,Yilmazoglu Oktay¹,Preu Sascha¹

Affiliation:

1. Technical University of Darmstadt,Terahertz Devices and Terahertz Systems,Department of Electrical Engineering and Information Technology,Darmstadt,Germany,64283

2. Institute of Physics, Otto von Guericke University Magdeburg,Faculty of Natural Sciences,Magdeburg,Germany,39106

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10298848/10298849/10299079.pdf?arnumber=10299079

Reference6 articles.

1. First Observation of Bias Oscillations in GaN Gunn Diodes on GaN Substrate

2. Review of GaN-based devices for terahertz operation

3. Two-terminal millimeter-wave sources

4. Complete Guide to Semiconductor Devices

5. Reliable GaN-Based THz Gunn Diodes With Side-Contact and Field-Plate Technologies

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