Highly efficient THz transient four-wave mixing in doped semiconductors-Reference-Cited by-同舟云学术

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Highly efficient THz transient four-wave mixing in doped semiconductors

Published:2022-08-28 Issue: Volume: Page:
ISSN:
Container-title:2022 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz)
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Author:

Dessmann N.¹,Le Nguyen H.²,Eless V.¹,Saeedi K.¹,Pavlov S. G.³,Litvinenko K. L.²,Riemann H.⁴,Abrosimov N. V.⁴,Aeppli G.⁵,Redlich B.¹,Murdin B.²

Affiliation:

1. Radboud University, Institute for Molecules and Materials, HFML-FELIX,Nijmegen,The Netherlands

2. University of Surrey,Advanced Technology Institute and Department of Physics,Guildford,UK,GU2 7XH

3. Institute of Optical Sensor Systems, German Aerospace Center (DLR),Berlin,Germany

4. Leibniz-Institut für Kristallzüchtung (IKZ),Berlin,Germany

5. Paul Scherrer Institute,Villigen,Switzerland,CH-5232

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9895463/9895465/09895783.pdf?arnumber=9895783

Reference3 articles.

1. Highly efficient THz four-wave mixing in doped silicon

2. Multi-valley theory for giant non-linear susceptibility of hydrogenic donors in silicon and germanium;le;Light Sci Appl,2018

3. Giant multiphoton absorption for THz resonances in silicon hydrogenic donors

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