Impacts of Notched-Gate Structure on Contact Etch Stop Layer (CESL) Stressed 90-nm nMOSFET-Reference-Cited by-同舟云学术

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Impacts of Notched-Gate Structure on Contact Etch Stop Layer (CESL) Stressed 90-nm nMOSFET

Published:2007-05 Issue:5 Volume:28 Page:376-378
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Lin Chien-Ting,Fang Yean-Kuen,Yeh Wen-Kuan,Lai Chieh-Ming,Hsu Che-Hua,Cheng Li-Wei,Ma Guang Hwa

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/4160006/04160031.pdf?arnumber=4160031

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of strained Ge-based NMOSFETs with Ge 0.93 Si 0.07 stressors on device layout;Solid-State Electronics;2017-12

2. Introduction;Power Management Techniques for Integrated Circuit Design;2016-05-13

3. Stress Modulation Technology for 45 nm-Gate-CMOS Strained by a Compressive SiN Film;Nanoscience and Nanotechnology Letters;2015-03-01

4. Performance enhancement of c-CESL-strained 95-nm-gate NMOSFET using trench-based structure;Journal of Semiconductors;2015-01

5. Impact of stress induced by stressors on hot carrier reliability of strained nMOSFETs;International Journal of Nanotechnology;2014

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